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FDN537N Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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FDN537N Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page January 2013 ©2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDN537N Rev.C2 FDN537N Single N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 m Ω Features Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed 100% UIL Tested RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Application Primary DC-DC Switch MOSFET Maximum Ratings T A = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage (Note 3) ±20 V ID Drain Current -Continuous (Package limited) TC = 25 °C 8.0 A 6.5 -Continuous TA = 25 °C (Note 1a) -Pulsed 25 PD Power Dissipation (Note 1a) 1.5 W Power Dissipation (Note 1b) 0.6 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJA Thermal Resistance, Junction to Ambient (Note 1a) 80 °C/W Thermal Resistance, Junction to Ambient (Note 1b) 180 Device Marking Device Package Reel Size Tape Width Quantity 537 FDN537N SSOT-3 7 ’’ 8 mm 3000 units |
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