SI2306 datasheet(2/2 Pages) MAKOSEMI

No de pièce	SI2306

Description	SOT-23 Plastic-Encapsulate MOSFETS

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Fabricant	MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]

Site Internet	http://www.makosemi.hk/

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Electrical characteristics (at TA=25

℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DS

VGS = 0V, ID =250µA

30

Gate-Threshold Voltage

VGS(th)

VDS =VGS, ID =250µA

1.0

3.0

V

Gate-Body Leakage

IGSS

VDS =0V, VGS =±20V

±

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS =30V, VGS =0V

0.5

µA

VGS =10V, ID =3.5A

0.038

0.047

Drain-Source On-Resistance

a

RDS(on)

VGS =4.5V, ID =2.8A

0.052

0.065

Ω

Forward Transconductance

a

gfs

VDS =4.5V, ID =2.5A

7.0

S

Diode Forward Voltage

VSD

IS=1.25A,VGS=0V

0.8

1.2

V

Dynamic

Gate Charge

Qg

VDS =15V,VGS =5V,ID =2.5A

3.0

4.5

Total Gate Charge

Qgt

6

9

Gate-Source Charge

Qgs

1.6

Gate-Drain Charge

Qgd

VDS =15V,VGS =10V,ID =2.5A

0.6

nC

Gate Resistance

Rg

f =1.0MHz

2.5

5

7.5

Ω

Input Capacitance

Ciss

305

Output Capacitance

Coss

65

Reverse Transfer Capacitance

Crss

VDS =15V,VGS =0V,f =1MHz

29

pF

Switching

Turn-On Delay Time

td(on)

7

11

Rise Time

tr

12

18

Turn-Off Delay Time

td(off)

14

25

Fall Time

tf

VDD=15V,

RL=15Ω, ID ≈1A,

VGEN=10V,Rg=6Ω

6

10

ns

Notes :

a.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.

A,May,2013

MAKO SEMICONDUCTOR CO.,LIMITED

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