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SB1H100 Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SB1H100 Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 4 page SB1H90, SB1H100 www.vishay.com Vishay General Semiconductor Revision: 13-Aug-13 1 Document Number: 88716 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Voltage Schottky Plastic Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • High barrier technology for improved high TJ • Guardring for overvoltage protection • Low power losses and high efficiency • Low forward voltage drop • Very low leakage current • High forward surge capability • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in middle voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA Case: DO-204AL (DO-41) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 90 V, 100 V IFSM 50 A VF 0.62 V IR 1.0 μA TJ max. 175 °C Package DO-204AL Diode variations Single DO-204AL (DO-41) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SB1H90 SB1H100 UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Maximum RMS voltage VRMS 63 70 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz IRRM 1.0 A Maximum operating junction temperature TJ 175 °C Storage temperature range TSTG - 55 to + 175 °C |
Numéro de pièce similaire - SB1H100 |
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Description similaire - SB1H100 |
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