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FST83100M Fiches technique(PDF) 1 Page - GeneSiC Semiconductor, Inc.

No de pièce FST83100M
Description  Silicon Power Schottky Diode
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Fabricant  GENESIC [GeneSiC Semiconductor, Inc.]
Site Internet  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

FST83100M Fiches technique(HTML) 1 Page - GeneSiC Semiconductor, Inc.

  FST83100M Datasheet HTML 1Page - GeneSiC Semiconductor, Inc. FST83100M Datasheet HTML 2Page - GeneSiC Semiconductor, Inc. FST83100M Datasheet HTML 3Page - GeneSiC Semiconductor, Inc.  
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VRRM = 45 V
IF(AV) = 160 A
Features
• High Surge Capability
TO-249AB Package
• Isolated to Plate
• Not ESD Sensitive
Parameter
FST16045L
Unit
45
V
32
V
45
V
Low VF Silicon Power
Schottky Diode
FST16045L
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Maximum recurrent peak reverse voltage
Maximum RMS voltage
M i
DC bl ki
lt
Conditions
Symbol
VRRM
VRMS
V
45
V
-55 to 150
°C
-55 to 150
°C
Parameter
FST16045L
Unit
160
A
1000
A
0.60
3
250
Thermal characteristics
Maximum thermal resistance,
junction - case
(per leg)
0.50
°C/W
Operating temperature
mA
V
R
ΘJC
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Conditions
Tstg
Symbol
Maximum DC blocking voltage
Storage temperature
TC = 100 °C
VDC
Tj
Average forward current (per pkg)
IF(AV)
Maximum instantaneous forward voltage (per
leg)
Maximum instantaneous reverse
current at rated DC blocking voltage
(per leg)
IR
Tj = 100 °C
tp = 8.3 ms, half sine
IFSM
Peak forward surge current
(per leg)
IFM = 80 A, Tj = 25 °C
Tj = 25 °C
VF
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1


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