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1N1190 Fiches technique(PDF) 1 Page - GeneSiC Semiconductor, Inc.

No de pièce 1N1190
Description  Silicon Standard Recovery Diode
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Fabricant  GENESIC [GeneSiC Semiconductor, Inc.]
Site Internet  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

1N1190 Fiches technique(HTML) 1 Page - GeneSiC Semiconductor, Inc.

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VRRM = 400 V - 600 V
IF = 35 A
Features
• High Surge Capability
DO-5 Package
• Types from 400 to 600 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter
Symbol
Unit
Repetitive peak reverse voltage
VRRM
V
RMS reverse voltage
VRMS
V
DC blocking voltage
VDC
V
Silicon Standard
Recovery Diode
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
400
600
420
600
500
400
Conditions
1N1188 (R)
1N1189 (R)
1N1190 (R)
500
350
280
1N1188 thru 1N1190R
2. Reverse polarity (R): Stud is anode.
DC blocking voltage
VDC
V
Continuous forward current
IF
A
Operating temperature
Tj
°C
Storage temperature
Tstg
°C
Parameter
Symbol
Unit
Diode forward voltage
μA
mA
Thermal characteristics
Thermal resistance, junction -
case
RthJC
°C/W
0.25
35
35
35
595
595
595
600
1.2
1.2
-55 to 150
10
500
400
10
1N1190 (R)
1.2
10
10
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
1N1188 (R)
1N1189 (R)
0.25
0.25
VR = 50 V, Tj = 140 °C
10
10
A
V
TC = 25 °C, tp = 8.3 ms
TC ≤ 140 °C
Conditions
VR = 50 V, Tj = 25 °C
IF = 35 A, Tj = 25 °C
Reverse current
IR
VF
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1


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