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1N1183A Fiches technique(PDF) 1 Page - GeneSiC Semiconductor, Inc.

No de pièce 1N1183A
Description  Silicon Standard Recovery Diode
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Fabricant  GENESIC [GeneSiC Semiconductor, Inc.]
Site Internet  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

1N1183A Fiches technique(HTML) 1 Page - GeneSiC Semiconductor, Inc.

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VRRM = 50 V - 600 V
IF = 40 A
Features
• High Surge Capability
DO-5 Package
• Types up to 600 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter
Symbol
1N1183A(R) 1N1184A(R)
1N1188A(R) 1N1190A(R)
Unit
Repetitive peak reverse
voltage
VRRM
50
100
400
600
V
RMS reverse voltage
VRMS
35
70
280
420
V
Silicon Standard
Recovery Diode
1N1183A thru 1N1190AR
200
140
1N1186A(R)
Maximum ratings, at Tj = 25 °C, unless otherwise specified
2. Reverse polarity (R): Stud is anode.
Conditions
DC blocking voltage
VDC
50
100
400
600
V
Continuous forward current
IF
40
40
40
40
A
Operating temperature
Tj
-55 to 150 -55 to 150
-55 to 150 -55 to 150
°C
Storage temperature
Tstg
-55 to 150 -55 to 150
-55 to 150 -55 to 150
°C
Parameter
Symbol
1N1183A(R) 1N1184A(R)
1N1188A(R) 1N1190A(R)
Unit
Diode forward voltage
1.1
1.1
1.1
1.1
10
10
10
10
μA
15
15
15
15
mA
Thermal characteristics
Thermal resistance, junction -
case
RthJC
1.25
1.25
1.25
1.25
°C/W
Reverse current
IR
VF
800
800
-55 to 150
TC = 25 °C, tp = 8.3 ms
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
200
A
800
V
15
VR = 50 V, Tj = 25 °C
IF = 40 A, Tj = 25 °C
TC ≤ 150 °C
Conditions
800
800
-55 to 150
40
10
1N1186A(R)
1.25
VR = 50 V, Tj = 140 °C
1.1
www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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