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74LVC1G11GW Fiches technique(PDF) 6 Page - NXP Semiconductors |
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74LVC1G11GW Fiches technique(HTML) 6 Page - NXP Semiconductors |
6 / 17 page 74LVC1G11 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 7 — 4 July 2012 6 of 17 NXP Semiconductors 74LVC1G11 Single 3-input AND gate 11. Dynamic characteristics [1] Typical values are measured at Tamb =25 C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively. [2] tpd is the same as tPLH and tPHL. [3] CPD is used to determine the dynamic power dissipation (PD in W). PD =CPD VCC2 fi N+ (CL VCC2 fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (C L VCC 2 f o) = sum of the outputs. 12. Waveforms Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for load circuit see Figure 8. Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit Min Typ[1] Max Min Max tpd propagation delay A, B and C to Y; see Figure 7 [2] VCC = 1.65 V to 1.95 V 1.5 4.7 17.2 1.5 21.5 ns VCC = 2.3 V to 2.7 V 1.0 3.0 6.2 1.0 7.8 ns VCC = 2.7 V 1.0 3.0 6.0 1.0 7.5 ns VCC = 3.0 V to 3.6 V 1.0 2.6 4.9 1.0 6.2 ns VCC = 4.5 V to 5.5 V 1.0 1.9 3.5 1.0 4.4 ns CPD power dissipation capacitance VI = GND to VCC; VCC = 3.3 V [3] -13- - - pF Measurement points are given in Table 9. VOL and VOH are typical output voltage levels that occur with the output load. Fig 7. The input (A, B, C) to output (Y) propagation delays 001aac031 A, B, C input VI GND VOH VOL Y output VM tPHL tPLH VM |
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