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IRFBF30S Fiches technique(PDF) 1 Page - Vishay Siliconix |
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IRFBF30S Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Document Number: 91389 www.vishay.com S11-1055-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET IRFBF30S, SiHFBF30S Vishay Siliconix FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated •Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) package is universially preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the D2PAK (TO-263) contribute to its wide acceptance throughout the industry. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 36 mH, Rg = 25 , IAS = 3.6 A (see fig. 12). c. ISD 3.6 A, dI/dt 70 A/μs, VDD 600, TJ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 900 RDS(on) ()VGS = 10 V 3.7 Qg (Max.) (nC) 78 Qgs (nC) 10 Qgd (nC) 42 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) G D S ORDERING INFORMATION Package D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHFBF30S-GE3 Lead (Pb)-free IRFBF30SPbF SiHFBF30S-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 900 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 3.6 A TC = 100 °C 2.3 Pulsed Drain Currenta IDM 14 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energyb EAS 250 mJ Repetitive Avalanche Currenta IAR 3.6 A Repetitive Avalanche Energya EAR 13 mJ Maximum Power Dissipation TC = 25 °C PD 125 W Peak Diode Recovery dV/dtc dV/dt 1.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
Numéro de pièce similaire - IRFBF30S |
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Description similaire - IRFBF30S |
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