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2SA1011 Datasheet(Fiches technique) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

Numéro de pièce 2SA1011
Description  Silicon PNP Power Transistors
Télécharger  4 Pages
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Fabricant  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Site Internet  http://www.jmnic.com
Logo JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

2SA1011 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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Product Specification
2
Silicon PNP Power Transistors
2SA1011
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-10mA ,RBE=?
-160
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA; IE=0
-180
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA; IC=0
-6
V
VCEsat
Collector-emitter saturation voltage
IC=-0.5A; IB=-50mA
-0.5
V
VBE
Base-emitter voltage
IC=-10mA ; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-120V; IE=0
-10
?A
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-10
?A
hFE
DC current gain
IC=-0.3A ; VCE=-5V
60
200
fT
Transition frequency
IC=-50mA ; VCE=-10V
100
MHz
Cob
Output capacitance
IE=0; f=1MHz ; VCB=-10V
30
pF
Switching times resistive load
ton
Turn-on time
0.29
?s
ts
Storage time
0.48
?s
tf
Fall time
IC=-0.5A ;IB1=-IB2=-50mA
VCC=20V; RL=40?
0.19
?s
hFE Classifications
D
E
60-120
100-200


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