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FDN86265P Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FDN86265P Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 7 page www.fairchildsemi.com 2 ©2014 Fairchild Semiconductor Corporation FDN86265P Rev.C Electrical Characteristics T J = 25 °C unless otherwise noted Off Characteristics On Characteristics (Note 2) Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V -150 V ΔBV DSS ΔT J Breakdown Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C -129 mV/°C IDSS Zero Gate Voltage Drain Current VDS = -120 V, VGS = 0 V -1 μA IGSS Gate to Source Leakage Current VGS = ±25 V, VDS = 0 V ±100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA-2 -3.3 -4 V ΔV GS(th) ΔT J Gate to Source Threshold Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C 5 mV/°C rDS(on) Static Drain to Source On Resistance VGS = -10 V, ID = -0.8 A 0.85 1.2 Ω VGS = -6 V, ID = -0.7 A 0.96 1.4 VGS = -10 V, ID = -0.8 A, TJ = 125 °C 1.54 2.2 gFS Forward Transconductance VDS = -10 V, ID = -0.8 A 1.5 S Ciss Input Capacitance VDS = -75 V, VGS = 0 V, f = 1 MHz 158 210 pF Coss Output Capacitance 17 25 pF Crss Reverse Transfer Capacitance 1.6 5 pF Rg Gate Resistance 0.1 3.3 6.7 Ω td(on) Turn-On Delay Time VDD = -75 V, ID = -0.8 A, VGS = -10 V, RGEN = 6 Ω 5.7 12 ns tr Rise Time 2.2 10 ns td(off) Turn-Off Delay Time 7.9 16 ns tf Fall Time 9.9 20 ns Qg Total Gate Charge VGS = 0 V to -10 V VDD = -75 V, ID = -0.8 A 2.9 4.1 nC Qgs Gate to Source Gate Charge 0.8 nC Qgd Gate to Drain “Miller” Charge 0.8 nC VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = -0.8 A (Note 2) -0.86 -1.3 V trr Reverse Recovery Time IF = -0.8 A, di/dt = 100 A/μs 49 78 ns Qrr Reverse Recovery Charge 70 112 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 3 mH, IAS = -2 A, VDD = -150 V, VGS = -10 V. 100% test at L = 0.1 mH, IAS = -9 A. 80 °C/W when mounted on a 1 in2 pad of 2 oz copper a) 180 °C/W when mounted on a minimum pad. b) |
Numéro de pièce similaire - FDN86265P |
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Description similaire - FDN86265P |
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