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FDN86265P Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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FDN86265P Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page May 2014 ©2014 Fairchild Semiconductor Corporation FDN86265P Rev.C www.fairchildsemi.com 1 FDN86265P P-Channel PowerTrench® MOSFET -150 V, -0.8 A, 1.2 Ω Features Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -0.8 A Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.7 A Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg This product is optimised for fast switching applications as well as load switch applications 100% UIL tested RoHS Compliant General Description This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance. Applications Active Clamp Switch Load Switch MOSFET Maximum Ratings T A = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage -150 V VGS Gate to Source Voltage ±25 V ID -Continuous (Note 1a) -0.8 A -Pulsed -5 EAS Single Pulse Avalanche Energy (Note 3) 6 mJ PD Power Dissipation (Note 1a) 1.5 W Power Dissipation (Note 1b) 0.6 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJC Thermal Resistance, Junction to Case (Note 1) 75 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1a) 80 Device Marking Device Package Reel Size Tape Width Quantity 265 FDN86265P SSOT-3 7 ’’ 8 mm 3000 units |
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