Moteur de recherche de fiches techniques de composants électroniques |
|
FDN86265P Fiches technique(PDF) 4 Page - Fairchild Semiconductor |
|
FDN86265P Fiches technique(HTML) 4 Page - Fairchild Semiconductor |
4 / 7 page www.fairchildsemi.com 4 ©2014 Fairchild Semiconductor Corporation FDN86265P Rev.C Figure 7. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 ID = -0.8 A VDD = -100 V VDD = -50 V Qg, GATE CHARGE (nC) VDD = -75 V Gate Charge Characteristics Figure 8. 0.1 1 10 100 1 10 100 1000 f = 1 MHz VGS = 0 V -VDS, DRAIN TO SOURCE VOLTAGE (V) Crss Coss Ciss Capacitance vs Drain to Source Voltage Figure9. 0.001 0.01 0.1 1 1 2 3 4 5 6 7 8 9 10 TJ = 100 oC TJ = 25 oC TJ = 125 oC t AV, TIME IN AVALANCHE (ms) UnclampedInductive Switching Capability Figure 10. 0.1 1 10 100 800 0.001 0.01 0.1 1 10 20 10 s CURVE BENT TO MEASURED DATA 100 μs 10 ms DC 1 s 100 ms 1 ms -VDS, DRAIN to SOURCE VOLTAGE (V) THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE TJ = MAX RATED RθJA = 180 oC/W TA = 25 oC Forward Bias Safe Operating Area Figure 11. Single Pulse Maximum Power Dissipation 10 -4 10 -3 10 -2 10 -1 110 100 1000 0.1 1 10 100 200 SINGLE PULSE RθJA = 180 o C/W T A = 25 o C t, PULSE WIDTH (sec) Typical Characteristics T J = 25 °C unless otherwise noted |
Numéro de pièce similaire - FDN86265P |
|
Description similaire - FDN86265P |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |