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BC33725TF Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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BC33725TF Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC337 / BC338 Rev. 1.1.0 October 2014 BC337 / BC338 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver Stages and Low-Power Output Stages • Complement to BC327 / BC328 Ordering Information Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Part Number Top Mark Package Packing Method BC33716BU BC33716 TO-92 3L Bulk BC33716TA BC33716 TO-92 3L Ammo BC33716TFR BC33716 TO-92 3L Tape and Reel BC33725BU BC33725 TO-92 3L Bulk BC33725TA BC33725 TO-92 3L Ammo BC33725TAR BC33725 TO-92 3L Ammo BC33725TF BC33725 TO-92 3L Tape and Reel BC33725TFR BC33725 TO-92 3L Tape and Reel BC33740BU BC33740 TO-92 3L Bulk BC33740TA BC33740 TO-92 3L Ammo BC33825TA BC33825 TO-92 3L Ammo Symbol Parameter Value Unit VCES Collector-Emitter Voltage BC337 50 V BC338 30 VCEO Collector-Emitter Voltage BC337 45 V BC338 25 VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 800 mA TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to 150 °C 1. Collector 2. Base 3. Emitter TO-92 1 |
Numéro de pièce similaire - BC33725TF |
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Description similaire - BC33725TF |
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