HVC369B datasheet(2/5 Pages) HITACHI

No de pièce	HVC369B

Description	Variable Capacitance Diode for VCO

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Fabricant	HITACHI [Hitachi Semiconductor]

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2 / 5 page

HVC369B

2

Absolute Maximum Ratings (Ta = 25

°C)

Item

Symbol

Value

Unit

Reverse voltage

V

R

15

V

Junction temperature

Tj

125

°C

Storage temperature

Tstg

-55 to +125

°C

Electrical Characteristics (Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse current

I

R1

—

10

nA

V

R = 15V

I

R2

—

100

V

R = 15V, Ta = 60 °C

Capacitance

C

1

4.65

—

5.15

pF

V

R = 1V, f = 1 MHz

C

4

1.85

—

2.15

V

R = 4V, f = 1 MHz

Capacitance ratio

n

2.3

—

C

1 / C4

Series resistance

r

s

—

0.5

Ω

V

R = 1V, f = 470 MHz

Numéro de pièce similaire - HVC369B

Fabricant	No de pièce	Fiches technique	Description
Leshan Radio Company	HVC369B	41Kb / 2P	Variable Capacitance Diode for VCO
Renesas Technology Corp	HVC369B	235Kb / 5P	Variable Capacitance Diode for VCO

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Description similaire - HVC369B

Fabricant	No de pièce	Fiches technique	Description
Hitachi Semiconductor	HVC372B	24Kb / 5P	Variable Capacitance Diode for VCO
Leshan Radio Company	HVC369B	41Kb / 2P	Variable Capacitance Diode for VCO
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Hitachi Semiconductor	HVD369B	35Kb / 5P	Variable Capacitance Diode for VCO
Renesas Technology Corp	HVC386B	139Kb / 5P	Variable Capacitance Diode for VCO
Hitachi Semiconductor	HVD355B	36Kb / 5P	Variable Capacitance Diode for VCO
Hitachi Semiconductor	HVC379B	20Kb / 5P	Variable Capacitance Diode for VCO
Renesas Technology Corp	HVD350B	141Kb / 5P	Variable Capacitance Diode for VCO
	HVC381B	140Kb / 5P	Variable Capacitance Diode for VCO
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