HSM88WA datasheet(2/5 Pages) HITACHI

No de pièce	HSM88WA

Description	Silicon Schottky Barrier Diode for Balanced Mixer

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Fabricant	HITACHI [Hitachi Semiconductor]

Site Internet	http://www.renesas.com/eng

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HSM88WA

2

Absolute Maximum Ratings (Ta = 25

°C)

Item

Symbol

Value

Unit

Reverse voltage

V

R

10

V

Average rectified current

I

O

15

mA

Junction temperature

Tj

125

°C

Storage temperature

Tstg

–55 to +125

°C

Electrical Characteristics (Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Condition

Forward voltage

V

F1

350

—

420

mV

I

F = 1 mA

V

F2

500

—

580

I

F = 10 mA

Reverse current

I

R1

—

0.2

µAV

R = 2V

I

R2

——10

V

R = 10V

Capacitance

C

—

0.85

pF

V

R = 0V, f = 1 MHz

Capacitance deviation

∆C

—

0.10

pF

V

R = 0V, f = 1 MHz

Forward voltage deviation

∆V

F

——10

mV

I

F = 10 mA

ESD-Capability

*1

Å\

30

—

V

C=200pF , Both forward and reverse

direction 1 pulse.

Notes

1. Failure criterion ; IR

≥ 400nA at VR =2 V

Numéro de pièce similaire - HSM88WA

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	HSM88WA	64Kb / 5P	Silicon Schottky Barrier Diode for Detector and Mixer
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Fabricant	No de pièce	Fiches technique	Description
Hitachi Semiconductor	HSB276AS	23Kb / 5P	Silicon Schottky Barrier Diode for Balanced Mixer
Renesas Technology Corp	HSM276ASR	141Kb / 5P	Silicon Schottky Barrier Diode for Balanced Mixer
	HSM276S	148Kb / 5P	Silicon Schottky Barrier Diode for Balanced Mixer
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Hitachi Semiconductor	HSM88AS	28Kb / 5P	Silicon Schottky Barrier Diode for Balanced Mixer
Hitachi Semiconductor	HSM88WK	28Kb / 5P	Silicon Schottky Barrier Diode for Balanced Mixer
Renesas Technology Corp	HSB276AS	149Kb / 5P	Silicon Schottky Barrier Diode for Balanced Mixer
	HSM88AS	64Kb / 5P	Silicon Schottky Barrier Diode for Balanced Mixer
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