Moteur de recherche de fiches techniques de composants électroniques |
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HSB83YP Fiches technique(PDF) 2 Page - Hitachi Semiconductor |
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HSB83YP Fiches technique(HTML) 2 Page - Hitachi Semiconductor |
2 / 6 page HSB83YP 2 Absolute Maximum Ratings (Ta = 25 °C) *2 Item Symbol Value Unit Peak reverse voltage V RM 300 V Reverse voltage V R 250 V Peak forward current I FM 300 mA Non-Repetitive peak forward surge current I FSM *1 2A Average rectified current I O 100 mA Junction temperature Tj 125 °C Storage temperature Tstg -55Å`+125 °C Note 1. Value at duration of 10msec. Note 2. Two device total. Electrical Characteristics (Ta = 25 °C) *1 Item Symbol Min Typ Max Unit Test Condition Forward voltage V F −− 1.2 V I F = 100 mA Reverse current I R1 −− 0.2 µAV R = 250V I R2 −− 100 V R = 300V Capacitance C −− 3.0 pF V R = 0V, f = 1 MHz Reverse recovery time t rr −− 100 ns I F = IR =30 mA, Irr = 3mA, RL= 100Ω Note 1. Per one device. |
Numéro de pièce similaire - HSB83YP |
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Description similaire - HSB83YP |
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