2SK3161 datasheet(3/9 Pages) HITACHI

No de pièce	2SK3161

Description	Silicon N Channel MOS FET High Speed Power Switching

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Fabricant	HITACHI [Hitachi Semiconductor]

Site Internet	http://www.renesas.com/eng

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2SK3161(L),2SK3161(S)

3

Main Characteristics

80

60

40

20

0

50

100

150

200

100

3

10

1

0.1

0.01

12

10 20

100

20

16

12

8

4

0

12

34

5

0

2

468

10

Ta = 25 °C

Tc = 75°C

25°C

–25°C

Case Temperature

Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage

V

(V)

DS

Maximum Safe Operation Area

Drain to Source Voltage

V

(V)

DS

Typical Output Characteristics

Gate to Source Voltage

V

(V)

GS

Typical Transfer Characteristics

Operation in

this area is

limited by R DS(on)

V

= 10 V

Pulse Test

DS

100

µs

1 ms

PW

=10

ms

(1shot)

DC

Operation

(Tc

= 25°C)

10

µs

50

40

30

20

10

3.5 V

3 V

V

=2.5 V

GS

10 V

Pulse Test

6 V

4 V

0.3

0.03

500

30

5

50

200

Numéro de pièce similaire - 2SK3161

Fabricant	No de pièce	Fiches technique	Description
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Inchange Semiconductor ...	2SK3161S	400Kb / 2P	isc N-Channel MOSFET Transistor

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2SK3161 Fiches technique(PDF) 3 Page - Hitachi Semiconductor

2SK3161 Fiches technique(HTML) 3 Page - Hitachi Semiconductor

Numéro de pièce similaire - 2SK3161

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