Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

2SK3000 Fiches technique(PDF) 2 Page - Hitachi Semiconductor

No de pièce 2SK3000
Description  Silicon N Channel MOS FET Low Frequency Power Switching
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  HITACHI [Hitachi Semiconductor]
Site Internet  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SK3000 Fiches technique(HTML) 2 Page - Hitachi Semiconductor

  2SK3000 Datasheet HTML 1Page - Hitachi Semiconductor 2SK3000 Datasheet HTML 2Page - Hitachi Semiconductor 2SK3000 Datasheet HTML 3Page - Hitachi Semiconductor 2SK3000 Datasheet HTML 4Page - Hitachi Semiconductor 2SK3000 Datasheet HTML 5Page - Hitachi Semiconductor 2SK3000 Datasheet HTML 6Page - Hitachi Semiconductor 2SK3000 Datasheet HTML 7Page - Hitachi Semiconductor 2SK3000 Datasheet HTML 8Page - Hitachi Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
2SK3000
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
40
V
Gate to source voltage
V
GSS
±10
V
Drain current
I
D
1.0
A
Drain peak current
I
D(pulse)
Note1
4.0
A
Reverse drain current
I
DR
1.0
A
Channel dissipation
Pch
Note2
400
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (10 mm x 10 mm x 1 mm
t )
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
40
60
V
I
D = 100µA, VGS = 0
Drain to source voltage
V
DS(SUS)
40
V
L = 100
µH, I
D = 3 A
Gate to source breakdown
voltage
V
(BR)GSS
±10
——V
I
G = ±100µA, VDS = 0
Zero gate voltege drain current I
DSS
1.0
µAV
DS = 40 V, VGS = 0
Gate to source leak current
I
GSS
——
±5
µAV
GS = ±6.5V, VDS = 0
Gate to source cutoff voltage V
GS(off)
1.1
2.1
V
I
D = 10µA, VDS = 5V
Static drain to source on state
resistance
R
DS(on)
0.3
0.5
I
D = 450 mA
V
GS = 4V
Note3
Static drain to source on state
resistance
R
DS(on)
0.25
0.3
I
D = 450 mA
V
GS = 10V
Note3
Forward transfer admittance
|y
fs|
0.5
1.2
S
I
D = 450 mA
V
DS = 10V
Note3
Input capacitance
Ciss
14.0
pF
V
DS = 10V
Output capacitance
Coss
68
pF
V
GS = 0
Reverse transfer capacitance Crss
3.0
pF
f = 1MHz
Turn-on delay time
t
d(on)
0.12
µsV
GS = 4V, I D = 450 mA
Rise time
t
r
0.6
µsR
L = 22Ω
Turn-off delay time
t
d(off)
1.7
µs
Fall time
t
f
1.4
µs
Note:
3. Pulse test
4. Marking is “ZY”.


Numéro de pièce similaire - 2SK3000

FabricantNo de pièceFiches techniqueDescription
logo
Renesas Technology Corp
2SK3000 RENESAS-2SK3000 Datasheet
119Kb / 7P
   Silicon N Channel MOS FET Low Frequency Power Switching
logo
Guangdong Kexin Industr...
2SK3000-3 KEXIN-2SK3000-3 Datasheet
146Kb / 4P
   N-Channel Enhancement MOSFET
logo
Renesas Technology Corp
2SK3000 RENESAS-2SK3000_15 Datasheet
173Kb / 8P
   Silicon N Channel MOS FET Low Frequency Power Switching
More results

Description similaire - 2SK3000

FabricantNo de pièceFiches techniqueDescription
logo
Hitachi Semiconductor
2SK2802 HITACHI-2SK2802 Datasheet
40Kb / 8P
   Silicon N Channel MOS FET Low Frequency Power Switching
logo
Renesas Technology Corp
2SK3000 RENESAS-2SK3000_15 Datasheet
173Kb / 8P
   Silicon N Channel MOS FET Low Frequency Power Switching
2SK3000 RENESAS-2SK3000 Datasheet
119Kb / 7P
   Silicon N Channel MOS FET Low Frequency Power Switching
2SK2570 RENESAS-2SK2570 Datasheet
172Kb / 7P
   Silicon N Channel MOS FET Low Frequency Power Switching
logo
Hitachi Semiconductor
2SK2570 HITACHI-2SK2570 Datasheet
40Kb / 8P
   Silicon N-Channel MOS FET Low Frequency Power Switching
logo
Renesas Technology Corp
RQM2201DNS RENESAS-RQM2201DNS Datasheet
120Kb / 8P
   Silicon N Channel MOS FET Power Switching
HITK0203MP RENESAS-HITK0203MP_12 Datasheet
104Kb / 7P
   Silicon N Channel MOS FET Power Switching
HITK0303MP RENESAS-HITK0303MP_13 Datasheet
103Kb / 7P
   Silicon N Channel MOS FET Power Switching
RQK0605JGDQA RENESAS-RQK0605JGDQA_11 Datasheet
90Kb / 7P
   Silicon N Channel MOS FET Power Switching
RQK0202RGDQA RENESAS-RQK0202RGDQA_11 Datasheet
91Kb / 7P
   Silicon N Channel MOS FET Power Switching
More results


Html Pages

1 2 3 4 5 6 7 8


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com