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2SK3000 Fiches technique(PDF) 2 Page - Hitachi Semiconductor |
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2SK3000 Fiches technique(HTML) 2 Page - Hitachi Semiconductor |
2 / 8 page 2SK3000 2 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Drain to source voltage V DSS 40 V Gate to source voltage V GSS ±10 V Drain current I D 1.0 A Drain peak current I D(pulse) Note1 4.0 A Reverse drain current I DR 1.0 A Channel dissipation Pch Note2 400 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. When using the glass epoxy board (10 mm x 10 mm x 1 mm t ) Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 40 — 60 V I D = 100µA, VGS = 0 Drain to source voltage V DS(SUS) 40 — — V L = 100 µH, I D = 3 A Gate to source breakdown voltage V (BR)GSS ±10 ——V I G = ±100µA, VDS = 0 Zero gate voltege drain current I DSS — — 1.0 µAV DS = 40 V, VGS = 0 Gate to source leak current I GSS —— ±5 µAV GS = ±6.5V, VDS = 0 Gate to source cutoff voltage V GS(off) 1.1 — 2.1 V I D = 10µA, VDS = 5V Static drain to source on state resistance R DS(on) — 0.3 0.5 Ω I D = 450 mA V GS = 4V Note3 Static drain to source on state resistance R DS(on) — 0.25 0.3 Ω I D = 450 mA V GS = 10V Note3 Forward transfer admittance |y fs| 0.5 1.2 — S I D = 450 mA V DS = 10V Note3 Input capacitance Ciss — 14.0 — pF V DS = 10V Output capacitance Coss — 68 — pF V GS = 0 Reverse transfer capacitance Crss — 3.0 — pF f = 1MHz Turn-on delay time t d(on) — 0.12 — µsV GS = 4V, I D = 450 mA Rise time t r — 0.6 — µsR L = 22Ω Turn-off delay time t d(off) — 1.7 — µs Fall time t f — 1.4 — µs Note: 3. Pulse test 4. Marking is “ZY”. |
Numéro de pièce similaire - 2SK3000 |
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Description similaire - 2SK3000 |
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