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2SK2730 Fiches technique(PDF) 3 Page - Hitachi Semiconductor

No de pièce 2SK2730
Description  Silicon N Channel MOS FET High Speed Power Switching
Download  10 Pages
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Fabricant  HITACHI [Hitachi Semiconductor]
Site Internet  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SK2730 Fiches technique(HTML) 3 Page - Hitachi Semiconductor

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2SK2730
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
500
V
I
D = 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
——V
I
G = ±100µA, VDS = 0
Gate to source leak current
I
GSS
——
±10
µAV
GS = ±25V, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
µAV
DS = 500 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.5
3.5
V
I
D = 1mA, VDS = 10V*
1
Static drain to source on state
resistance
R
DS(on)
0.2
0.24
I
D = 15A, VGS = 10V*
1
Forward transfer admittance
|y
fs|12
20
S
I
D = 15A, VDS = 10V*
1
Input capacitance
Ciss
3500
pF
V
DS = 10V
Output capacitance
Coss
1000
pF
V
GS = 0
Reverse transfer capacitance Crss
150
pF
f = 1MHz
Total gate charge
Qg
65
nc
V
DD = 400V
Gate to source charge
Qgs
16
nc
V
GS = 10V
Gate to drain charge
Qgd
24
nc
I
D = 25A
Turn-on delay time
t
d(on)
50
ns
V
GS = 10V, ID = 15A
Rise time
t
r
140
ns
R
L = 2Ω
Turn-off delay time
t
d(off)
200
ns
Fall time
t
f
110
ns
Body to drain diode forward
voltage
V
DF
1.1
V
I
D = 25A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
450
ns
I
F = 25A, VGS = 0
diF/ dt = 100A/
µs
Note:
1. Pulse test


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