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2SJ586 Fiches technique(PDF) 2 Page - Hitachi Semiconductor

No de pièce 2SJ586
Description  Silicon P Channel MOS FET High Speed Switching
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Fabricant  HITACHI [Hitachi Semiconductor]
Site Internet  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SJ586 Fiches technique(HTML) 2 Page - Hitachi Semiconductor

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2SJ586
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
-20
V
Gate to source voltage
V
GSS
±10
V
Drain current
I
D
-100
mA
Drain peak current
I
D(pulse)
Note1
-400
mA
Body-drain diode reverse drain current
I
DR
-100
mA
Channel dissipation
Pch
Note 2
300
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5x 20 x0.7 mm)
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
-20
V
I
D = -100 µA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±10
V
I
G = ±100 µA, VDS = 0
Gate to source leak current
I
GSS
——
±5
µAV
GS = ±8 V, VDS = 0
Zero gate voltege drain
current
I
DSS
——-1
µAV
DS = -20 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
-0.8
-1.8
V
I
D = -10µA, VDS = -5 V
Static drain to source on state R
DS(on)
4.1
5.0
I
D = -50 mA,VGS = -4 V
Note 3
resistance
R
DS(on)
6.0
8.5
I
D = -50 mA,VGS = -2.5 V
Note 3
Forward transfer admittance
|y
fs|
94
144
mS
I
D = -50 mA, VDS = -10 V
Note 3
Input capacitance
Ciss
28
pF
V
DS = -10 V
Output capacitance
Coss
21
pF
V
GS = 0
Reverse transfer capacitance Crss
7
pF
f = 1 MHz
Turn-on delay time
t
d(on)
30—ns
I
D = -50 mA, VGS = -4 V
Rise time
t
r
90—ns
R
L = 200 Ω
Turn-off delay time
t
d(off)
87—ns
Fall time
t
f
97—ns
Note:
3. Pulse test
4. Marking is CP


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