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2SJ586 Fiches technique(PDF) 2 Page - Hitachi Semiconductor |
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2SJ586 Fiches technique(HTML) 2 Page - Hitachi Semiconductor |
2 / 8 page 2SJ586 2 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Drain to source voltage V DSS -20 V Gate to source voltage V GSS ±10 V Drain current I D -100 mA Drain peak current I D(pulse) Note1 -400 mA Body-drain diode reverse drain current I DR -100 mA Channel dissipation Pch Note 2 300 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5x 20 x0.7 mm) Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS -20 — — V I D = -100 µA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±10 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS —— ±5 µAV GS = ±8 V, VDS = 0 Zero gate voltege drain current I DSS ——-1 µAV DS = -20 V, VGS = 0 Gate to source cutoff voltage V GS(off) -0.8 — -1.8 V I D = -10µA, VDS = -5 V Static drain to source on state R DS(on) — 4.1 5.0 Ω I D = -50 mA,VGS = -4 V Note 3 resistance R DS(on) — 6.0 8.5 Ω I D = -50 mA,VGS = -2.5 V Note 3 Forward transfer admittance |y fs| 94 144 — mS I D = -50 mA, VDS = -10 V Note 3 Input capacitance Ciss — 28 — pF V DS = -10 V Output capacitance Coss — 21 — pF V GS = 0 Reverse transfer capacitance Crss — 7 — pF f = 1 MHz Turn-on delay time t d(on) — 30—ns I D = -50 mA, VGS = -4 V Rise time t r — 90—ns R L = 200 Ω Turn-off delay time t d(off) — 87—ns Fall time t f — 97—ns Note: 3. Pulse test 4. Marking is CP |
Numéro de pièce similaire - 2SJ586 |
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Description similaire - 2SJ586 |
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