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2SJ534 Fiches technique(PDF) 2 Page - Hitachi Semiconductor |
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2SJ534 Fiches technique(HTML) 2 Page - Hitachi Semiconductor |
2 / 9 page 2SJ534 2 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Drain to source voltage V DSS –60 V Gate to source voltage V GSS ±20 V Drain current I D –18 A Drain peak current I D(pulse) Note1 –72 A Body-drain diode reverse drain current I DR –18 A Avalanche current I AP Note3 –18 A Avalanche energy E AR Note3 27 mJ Channel dissipation Pch Note2 30 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS –60 — — V I D = –10mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 ——V I G = ±100µA, VDS = 0 Zero gate voltege drain current I DSS — — –10 µAV DS = –60 V, VGS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±16V, VDS = 0 Gate to source cutoff voltage V GS(off) –1.0 — –2.0 V I D = –1mA, VDS = –10V Static drain to source on state R DS(on) — 0.050 0.065 Ω I D = –9A, VGS = –10V Note4 resistance R DS(on) — 0.070 0.110 Ω I D = –9A, VGS = –4V Note4 Forward transfer admittance |y fs| 1016— S I D = –9A, VDS = -10V Note4 Input capacitance Ciss — 1300 — pF V DS = –10V Output capacitance Coss — 650 — pF V GS = 0 Reverse transfer capacitance Crss — 180 — pF f = 1MHz Turn-on delay time t d(on) — 14 — ns V GS = –10V, I D = –9A Rise time t r — 95 — ns R L =3.33Ω Turn-off delay time t d(off) — 190 — ns Fall time t f — 135 — ns Body–drain diode forward voltage V DF — –1.0 — V I F = –18A, VGS = 0 Body–drain diode reverse recovery time t rr — 70 — ns I F = –18A, VGS = 0 diF/ dt =50A/ µs Note: 4. Pulse test |
Numéro de pièce similaire - 2SJ534 |
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Description similaire - 2SJ534 |
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