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ST1002 Fiches technique(PDF) 1 Page - Stanson Technology

No de pièce ST1002
Description  N Channel Enhancement Mode MOSFET
Download  7 Pages
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Fabricant  STANSON [Stanson Technology]
Site Internet  http://www.stansontech.com
Logo STANSON - Stanson Technology

ST1002 Fiches technique(HTML) 1 Page - Stanson Technology

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ST1002
N Channel Enhancement Mode MOSFET
3.0A
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stnasontech.com
ST1002 2013 . V1
1
DESCRIPTION
The ST1002 is the N-Channel logic enhancement mode power field effect transistor is
produce using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance. These
device are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other battery powered circuits where high
side switching
.
PIN CONFIGURATION
SOT-23-3L
1.Gate
2.Source
3.Drain
PART MARKING
SOT-23-3L
Y: Year Code
A: Produce Code
FEATURE
100V/3.0A, RDS(ON) = 135mΩ
@VGS = 10V
100V/2.5A, RDS(ON) = 140mΩ
@VGS = 4.5V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
3
1
2
D
G
S
3
1
2
102YA


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