2SJ221 datasheet(4/8 Pages) HITACHI

No de pièce	2SJ221

Description	Silicon P-Channel MOS FET

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Fabricant	HITACHI [Hitachi Semiconductor]

Site Internet	http://www.renesas.com/eng

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4 / 8 page

2SJ221

4

–10

–8

–20

Gate to Source Voltage VGS (V)

–8

–2

–4

–12

–16

0

–4

–6

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

–20 A

–10 A

ID = –5 A

Pulse Test

5

–100

Drain Current ID (A)

–0.1

Static Drain to Source on State

Resistance vs. Drain Current

3

1

0.3

0.1

0.03

0.01

0.005

–0.3

–1

–3

–10

–30

Pulse Test

VGS = –4 V

–10 V

1.0

40

160

Case Temperature TC (°C)

0.8

0.2

0

80

120

0

0.4

0.6

Static Drain to Source on State

Resistance vs. Case Temperature

–40

ID = –20 A

–5, –10 A

VGS = –4 V

VGS = –10 V –5, –10 A

–20 A

Pulse Test

100

–100

Drain Current ID (A)

Forward Transfer Admittance

vs. Drain Current

–0.1

30

10

3

1

0.3

0.5

–0.3

–1

–3

–10

–30

VDS = –10 V

Pulse Test

–25°C

75°C

TC = 25°C

Numéro de pièce similaire - 2SJ221

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	2SJ221	81Kb / 7P	Silicon P Channel MOS FET
Inchange Semiconductor ...	2SJ221	64Kb / 2P	High Speed Switching
Renesas Technology Corp	2SJ221-E	81Kb / 7P	Silicon P Channel MOS FET

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Description similaire - 2SJ221

Fabricant	No de pièce	Fiches technique	Description
Hitachi Semiconductor	2SJ363	37Kb / 7P	Silicon P-Channel MOS FET
Hitachi Semiconductor	2SJ386	38Kb / 7P	Silicon P-Channel MOS FET
Renesas Technology Corp	2SJ181(L)	109Kb / 7P	Silicon P Channel MOS FET
	2SJ555	109Kb / 10P	Silicon P Channel MOS FET
	2SJ518	102Kb / 9P	Silicon P Channel MOS FET
	2SJ526	110Kb / 10P	Silicon P Channel MOS FET
	2SJ542	107Kb / 10P	Silicon P Channel MOS FET
	2SJ543	107Kb / 10P	Silicon P Channel MOS FET
	2SJ550	95Kb / 9P	Silicon P Channel MOS FET
	2SJ551	95Kb / 9P	Silicon P Channel MOS FET

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2SJ221 Fiches technique(PDF) 4 Page - Hitachi Semiconductor

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