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2SC460 Fiches technique(PDF) 3 Page - Hitachi Semiconductor

No de pièce 2SC460
Description  Silicon NPN Epitaxial Planar
Download  13 Pages
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Fabricant  HITACHI [Hitachi Semiconductor]
Site Internet  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SC460 Fiches technique(HTML) 3 Page - Hitachi Semiconductor

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2SC460, 2SC461
3
Electrical Characteristics (Ta = 25°C)
2SC460
2SC461
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
30
30
V
I
C = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
30
30
V
I
C = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
5
—5
——
V
I
E = 10 µA, IC = 0
Collector cutoff current
I
CBO
0.5
0.5
µAV
CB = 18 V, IE = 0
Emitter cutoff current
I
EBO
0.5
0.5
µAV
EB = 2 V, IC = 0
Base to emitter voltage
V
BE
0.63
0.75
0.63
0.75
V
V
CE = 12 V, IC = 2 mA
DC current transfer ratio h
FE*
1
35
200
35
200
V
CE = 12 V, IC = 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
0.6
1.1
0.6
1.1
V
I
C = 10 mA, IB = 1 mA
Gain bandwidth product f
T
230
230
MHz
V
CE = 12 V, IC = 2 mA
Collector output
capacitance
C
ob
1.8
3.5
1.8
3.5
pF
V
CB = 10 V, IE = 0,
f = 1 MHz
10.7 MHz power gain
PG
26
29
————
dB
V
CE = 6 V, IE = –1 mA
f = 10.7 MHz
100 MHz power gain
PG
13
17
dB
V
CE = 6 V, IE = –1 mA
f = 100 MHz
Noise figure
NF
2.0
————
dB
V
CE = 6 V, IE = –1 mA
f = 1MHz
R
g = 500Ω
Note:
1. The 2SC460 and 2SC461 are grouped by h
FE as follows.
AB
C
35 to 70
60 to 120
100 to 200


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