2SC4592 datasheet(2/10 Pages) HITACHI

No de pièce	2SC4592

Description	Silicon NPN Epitaxial

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Fabricant	HITACHI [Hitachi Semiconductor]

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2 / 10 page

2SC4592

2

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

V

CBO

15

V

Collector to emitter voltage

V

CEO

9V

Emitter to base voltage

V

EBO

1.5

V

Collector current

I

C

50

mA

Collector power dissipation

P

C

150

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

V

(BR)CBO

15

——V

I

C = 10 µA, IE = 0

Collector cutoff current

I

CBO

——

1

µAV

CB = 12 V, IE = 0

I

CEO

——

1

mA

V

CE = 9 V, RBE = ∞

Emitter cutoff current

I

EBO

——

10

µAV

EB = 1.5 V, IC = 0

DC current transfer ratio

h

FE

40

120

250

V

CE = 5 V, IC = 20 mA

Collector output capacitance

Cob

—

0.8

1.5

pF

V

CB = 5 V, IE = 0,

f = 1MHz

Gain bandwidth product

f

T

7.0

9.5

—

GHz

V

CE = 5 V, IC = 20 mA

Power gain

PG

11.0

14.0

—

dB

V

CE = 5 V, IC = 20 mA,

f = 900 MHz

Noise figure

NF

—

1.2

2.5

dB

V

CE = 5 V, IC = 5 mA,

f = 900 MHz

Note:

Marking is “XN–”.

Numéro de pièce similaire - 2SC4592

Fabricant	No de pièce	Fiches technique	Description
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2SC4592 Fiches technique(PDF) 2 Page - Hitachi Semiconductor

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