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2SA1191 Fiches technique(PDF) 5 Page - Hitachi Semiconductor |
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2SA1191 Fiches technique(HTML) 5 Page - Hitachi Semiconductor |
5 / 10 page 2SA1190, 2SA1191 5 Collector Cutoff Current vs. Collector to Base Voltage Collector to Base Voltage VCB (V) 0 –20 –40 –60 –80 –100 –1 –10 –100 –1,000 –10.000 Ta = 75 °C IE = 0 25 –25 Collector Cutoff Current vs. Collector to Emitter Voltage Collector to Emitter Voltage VCE (V) 0 –20 –40 –60 –80 –100 –0.1 –1.0 –10 –100 –1,000 Ta = 75 °C 25 –25 RBE = ∞ Emitter Cutoff Current vs. Emitter to Base Voltage Emitter to Base Voltage VEB (V) 0 –2–4–6–8 –10 –0.1 –1.0 –10 –100 –1,000 Ta = 75 °C 25 –25 IC = 0 Collector to Emitter Breakdown Voltage vs. Base to Emitter Resistance Base to Emitter Resistance RBE (Ω) 10 100 1 k 10 k 100 k –140 –150 –160 –170 –180 –190 Typical Value IC = –1 mA |
Numéro de pièce similaire - 2SA1191 |
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Description similaire - 2SA1191 |
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