KSD1692 datasheet(1/4 Pages) FAIRCHILD

No de pièce	KSD1692

Description	High Dc Durrent Gain

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

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Rev. A, February 2000

NPN Silicon Darlington Transistor

Absolute Maximum Ratings T

C=25°C unless otherwise noted

* PW

≤10ms, duty Cycle≤50%

Electrical Characteristics T

C=25°C unless otherwise noted

* Pulse test: PW

≤350µs, duty Cycle≤2% Pulsed

hFE Classificntion

Sym-

bol

Parameter

Value

Units

VCBO

Collector-Base Voltage

150

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current (DC)

3

A

ICP

*Collector Current (Pulse)

5

A

PC

Collector Dissipation (Ta=25°C)

1.3

A

P C

Collector Dissipation (TC=25°C)

15

W

TJ

Junction Temperature

150

W

TSTG

Storage Temperature

- 55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

ICBO

Collector Cut-off Current

VCB = 100V, IE = 0

10

µA

IEBO

Emitter Cut-off Current

VEB = 5V, IC = 0

2

mA

hFE1

hFE2

*DC Current Gain

VCE = 2V, IC = 1.5A

VCE = 2V, IC = 3A

2K

1K

20K

VCE(sat)

*Collector-Emitter Saturation Voltage

IC = 1.5A, IB = 1.5mA

0.9

1.2

V

VBE(sat)

*Base-Emitter Saturation Voltage

IC = 1.5A, IB = 1.5mA

1.5

2

V

tON

Turn ON Time

VCC = 40V, IC = 1.5A

IB1 = - IB2 = 1.5mA

RL = 27Ω

0.5

µs

tSTG

Storage Time

2

µs

tF

Fall Time

1

µs

Classification

O

Y

G

hFE1

2000 ~ 5000

4000 ~ 12000

6000 ~ 20000

KSD1692

Feature

• High Dc Durrent Gain

• Low Collector Saturation Voltage

• Built-in a Damper Diode at E-C

• High Power Dissipation : PC = 1.3W (Ta=25°C)

1

TO-126

1. Emitter

2.Collector

3.Base

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