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74HCT2G66GD Fiches technique(PDF) 5 Page - NXP Semiconductors

No de pièce 74HCT2G66GD
Description  Dual single-pole single-throw analog switch
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

74HCT2G66GD Fiches technique(HTML) 5 Page - NXP Semiconductors

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74HC_HCT2G66
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 10 — 3 October 2013
5 of 23
NXP Semiconductors
74HC2G66; 74HCT2G66
Dual single-pole single-throw analog switch
9.
Recommended operating conditions
[1]
To avoid drawing VCC current out of pin nZ, when switch current flows in pin nY, the voltage drop across the bidirectional switch must not
exceed 0.4 V. If the switch current flows into pin nZ, no VCC current will flow out of terminal nY. In this case there is no limit for the
voltage drop across the switch, but the voltage at pins nY and nZ may not exceed VCC or GND.
10. Static characteristics
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).[1]
Symbol
Parameter
Conditions
74HC2G66
74HCT2G66
Unit
Min
Typ
Max
Min
Typ
Max
VCC
supply voltage
2.0
5.0
10.0
4.5
5.0
5.5
V
VI
input voltage
0
-
VCC
0-
VCC
V
VO
output voltage
0
-
VCC
0-
VCC
V
VSW
switch voltage
0
-
VCC
0-
VCC
V
Tamb
ambient temperature
40
+25
+125
40
+25
+125
C
t/V
input transition rise
and fall rate
VCC = 2.0 V
-
-
625
-
-
-
ns/V
VCC = 4.5 V
-
1.67
139
-
1.67
139
ns/V
VCC = 6.0 V
-
-
83
-
-
-
ns/V
VCC = 10.0 V
-
-
35
-
-
-
ns/V
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
40 C to +85 C
40 C to +125 C Unit
Min
Typ[1]
Max
Min
Max
74HC2G66
VIH
HIGH-level
input voltage
VCC = 2.0 V
1.5
1.2
-
1.5
-
V
VCC = 4.5 V
3.15
2.4
-
3.15
-
V
VCC = 6.0 V
4.2
3.2
-
4.2
-
V
VCC = 9.0 V
6.3
4.7
-
6.3
-
V
VIL
LOW-level
input voltage
VCC = 2.0 V
-
0.8
0.5
-
0.5
V
VCC = 4.5 V
-
2.1
1.35
-
1.35
V
VCC = 6.0 V
-
2.8
1.8
-
1.8
V
VCC = 9.0 V
-
4.3
2.7
-
2.7
V
II
input leakage current
nE; VI =VCC or GND
VCC =6.0 V
-
-
0.1
-
0.1
A
VCC =9.0 V
-
-
0.2
-
0.2
A
IS(OFF)
OFF-state
leakage current
nY or nZ; VCC = 9.0 V; see Figure 6
-
0.1
1.0
-
1.0
A
IS(ON)
ON-state
leakage current
nY or nZ; VCC = 9.0 V; see Figure 7
-
0.1
1.0
-
1.0
A
ICC
supply current
nE, nY and nZ = VCC or GND
VCC =6.0 V
-
-
10
-
20
A
VCC =9.0 V
-
-
20
-
40
A


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