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IRF7752PBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRF7752PBF Fiches technique(HTML) 1 Page - International Rectifier |
1 / 8 page HEXFET® Power MOSFET HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that Inter- national Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for use in battery and load management. The TSSOP-8 package, has 45% less footprint area of the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the TSSOP-8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. IRF7752PbF Description l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile (< 1.1mm) l Available in Tape & Reel l Lead-Free TSSOP-8 Parameter Max. Units VDS Drain- Source Voltage 30 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ±4.6 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ±3.7 A IDM Pulsed Drain Current ±37 PD @TA = 25°C Power Dissipation 1.0 PD @TA = 70°C Power Dissipation 0.64 Linear Derating Factor 8.0 mW/°C VGS Gate-to-Source Voltage ± 12 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Parameter Max. Units RθJA Maximum Junction-to-Ambient 125 °C/W Thermal Resistance Absolute Maximum Ratings W www.irf.com 1 05/14/09 VDSS RDS(on) max ID 30V 0.030@VGS = 10V 4.6A 0.036@VGS = 4.5V 3.9A # " ! Ã2Ã9 !Ã2ÃT "Ã2ÃT #Ã2ÃB 'Ã2Ã9! &Ã2ÃT! %Ã2ÃT! $Ã2ÃB! $ % & ' PD-96016A |
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