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IRF6691PBF Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRF6691PBF
Description  RoHs Compliant
Download  10 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF6691PBF Fiches technique(HTML) 1 Page - International Rectifier

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www.irf.com
1
05/18/06
DirectFET
™ Power MOSFET ‚
Description
The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6691PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package
inductance to reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr
of the body drain diode further reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal
for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of micropro-
cessors. The IRF6691PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET
sockets.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Typical values (unless otherwise specified)
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
DirectFET
™ ISOMETRIC
PD - 97204
l RoHs Compliant

l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible

l Compatible with existing Surface Mount Techniques

IRF6691PbF
IRF6691TRPbF
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.72mH, RG = 25Ω, IAS = 26A.
Notes:
2
3
4
5
6
7
8
9
10
VGS, Gate -to -Source Voltage (V)
0
1
2
3
4
5
6
7
8
9
10
ID = 32A
TJ = 25°C
TJ = 125°C
0
10
2030
405060
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VDS= 16V
VDS= 10V
ID= 17A
SQ
SX
ST
MQ
MX
MT
VDSS
VGS
RDS(on)
RDS(on)
20V max ±12V max 1.2m
Ω@ 10V 1.8mΩ@ 4.5V
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
47nC
15nC
4.4nC
26nC
30nC
2.0V
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V e
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
e
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V f
IDM
Pulsed Drain Current
g
EAS
Single Pulse Avalanche Energy
h
mJ
IAR
Avalanche Current
Ãg
A
230
26
180
j
Max.
32
26
260
±12
20
MT
PROVISIONAL


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