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BC558 Fiches technique(PDF) 2 Page - General Semiconductor |
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BC558 Fiches technique(HTML) 2 Page - General Semiconductor |
2 / 6 page ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified BC556 THRU BC559 Symbol Min. Typ. Max. Unit h-Parameters at –VCE = 5 V, –IC = 2 mA, f = 1 kHz Current Gain Current Gain Group A B C Input Impedance Current Gain Group A B C Output Admittance Current Gain Group A B C Reverse Voltage Transfer Ratio Current Gain Group A B C hfe hfe hfe hie hie hie hoe hoe hoe hre hre hre – – – 1.6 3.2 6 – – – – – – 220 330 600 2.7 4.5 8.7 18 30 60 1.5 · 10–4 2 · 10–4 3 · 10–4 – – – 4.5 8.5 15 30 60 110 – – – – – – k Ω k Ω k Ω µS µS µS – – – DC Current Gain at –VCE = 5 V, –IC = 10 µA Current Gain Group A B C at –VCE = 5 V, –IC = 2 mA Current Gain Group A B C at –VCE = 5 V, –IC = 100 mA Current Gain Group A B C hFE hFE hFE hFE hFE hFE hFE hFE hFE – – – 110 200 420 – – – 90 150 270 180 290 500 120 200 400 – – – 220 450 800 – – – – – – – – – – – – Thermal Resistance Junction to Ambient Air RthJA –– 2501) K/W Collector Saturation Voltage at –IC = 10 mA, –IB = 0.5 mA at –IC = 100 mA, –IB = 5 mA –VCEsat –VCEsat – – 80 250 300 650 mV mV Base Saturation Voltage at –IC = 10 mA, –IB = 0.5 mA at –IC = 100 mA, –IB = 5 mA –VBEsat –VBEsat – – 700 900 – – mV mV Base-Emitter Voltage at –VCE = 5 V, –IC = 2 mA at –VCE = 5 V, –IC = 10 mA –VBE –VBE 600 – 660 – 750 800 mV mV Collector-Emitter Cutoff Current at –VCE = 80 V BC556 at –VCE = 50 V BC557 at –VCE = 30 V BC558 at –VCE = 80 V, Tj = 125 °C BC556 at –VCE = 50 V, Tj = 125 °C BC557 at –VCE = 30 V, Tj = 125 °C BC558, BC559 –ICES –ICES –ICES –ICES –ICES –ICES – – – – – – 0.2 0.2 0.2 – – – 15 15 15 4 4 4 nA nA nA µA µA µA 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. |
Numéro de pièce similaire - BC558 |
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Description similaire - BC558 |
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