Data Sheet D14060EJ1V0DS00

7

2SK3299

PACKAGE DRAWINGS (Unit : mm)

1)TO-220AB (MP-25)

2)TO-262 (MP-25 Fin Cut)

3)TO-263 (MP-25ZJ)

EQUIVALENT CIRCUIT

Remark

Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as

possible, and quickly dissipate it once, when it has occurred.

4.8 MAX.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1 2 3

10.6 MAX.

10.0

3.6±0.2

4

1.3±0.2

0.75±0.1

2.54 TYP.

2.54 TYP.

1.3±0.2

0.5±0.2

2.8±0.2

φ

4.8 MAX.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1

2

3

(10)

4

1.3±0.2

0.75±0.3

2.54 TYP.

2.54 TYP.

1.3±0.2

0.5±0.2

2.8±0.2

(10)

1.4±0.2

2.54 TYP.

2.54 TYP.

123

4

4.8 MAX.

1.3±0.2

0.5±0.2

(0.5R)

(0.8R)

1.Gate

2.Drain

3.Source

4.Fin (Drain)

0.7±0.2

Body

Diode

Source (S)

Drain (D)

Gate (G)