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FP0035 Fiches technique(PDF) 1 Page - Solid States Devices, Inc

No de pièce FP0035
Description  P-CHANNEL POWER MOSFET
Download  2 Pages
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Fabricant  SSDI [Solid States Devices, Inc]
Site Internet  http://www.ssdi-power.com
Logo SSDI - Solid States Devices, Inc

FP0035 Fiches technique(HTML) 1 Page - Solid States Devices, Inc

  FP0035 Datasheet HTML 1Page - Solid States Devices, Inc FP0035 Datasheet HTML 2Page - Solid States Devices, Inc  
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PRELIMINARY
SOLID STATE DEVICES, INC.
SFF9130-28D
FEATURES:
DATA SHEET #: FP0035D
MAXIMUM RATINGS
VGS
±
20
Volts
Gate to Source Voltage
ID
-11
-7
Continuous Drain Current
Drain to Source Voltage
VDS
-100
Amps
Volts
Watts
• Rugged construction with poly silicon gate
• Low RDS (on) and high transconductance
• Excellent high temperature stability
• Very fast switching speed
• Fast recovery and superior dv/dt performance
• Increased reverse energy capability
• Low input transfer capacitance for easy paralleling
• Hermetically sealed surface mount package
• TX, TXV and Space Level screening available
• Replaces: 2x IRF9130 Types
28 PIN CLCC
-11 AMP
-100 VOLTS
0.30
S
DUAL UNCOMMITED
P-CHANNEL POWER MOSFET
Total Device Dissipation
PD
36
37
Thermal Resistance, Junction to Case (Both)
R2JC
Top & Tstg
-55 to +150
Operating and Storage Temperature
oC
DESIGNER'S DATA SHEET
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
oC/W
3.5
CHARACTERISTIC
SYMBOL
VALUE
UNIT
PACKAGE OUTLINE: 28 PIN CLCC
PIN OUT:
SOURCE (1): 16 - 21
DRAIN (1):
24 - 28
GATE (1):
22
SOURCE (2): 9 - 14
DRAIN (2):
2 - 6
GATE (2):
8
NOTE:
All drain/source pins must be connected on
the PC board in order to maximize current
carrying capability and to minimize RDS (on)
TC = 25
oC
TC = 100
oC
TC = 25
oC
TC = 55
oC
EAS
84
mJ
Single Pulse Avalange Energy
EAR
7.5
mJ
Repetitive Avalange Energy
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773


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