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F00019D Fiches technique(PDF) 2 Page - Solid States Devices, Inc |
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F00019D Fiches technique(HTML) 2 Page - Solid States Devices, Inc |
2 / 2 page Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SFF130/5 Electrical Characteristics @ TJ = 25ºC (Unless Otherwise Specified) Symbol Min Typ Max Units Drain to Source Breakdown Voltage (VGS=0 V, ID=250 µA) BVDSS 100 –– –– Volts Temperature Coefficient of Breakdown Voltage ∆BVDSS ∆Tj –– 100 –– mV/ ºC Drain to Source On State Resistance (VGS=10 V ) ID=5A ID=8A RDS(on) –– 0.13 0.14 0.18 0.21 Ω Gate Threshold Voltage (VDS=VGS, ID=250 µA ) VGS(th) 2.0 2.8 4.0 V Forward Transconductance (VDS>ID(on) X RDS(on) Max, IDS= 9A ) gfs 3 7 –– mho Zero Gate Voltage Drain Current (VDS=80% max rated voltage, VGS=0 V) (VDS=80% rated VDS, VGS=0 V, TA=125ºC) IDSS –– –– –– –– 25 250 µA Gate to Source Leakage Forward Gate to Source Leakage Reverse At rated VGS IGSS –– –– –– –– +100 -100 nA Total Gate Charge Gate to Source Charge Gate to Drain Charge VGS=10 Volts 50% rated VDS Rated ID Qg Qgs Qgd 12 1 3.8 17 3.7 7.0 28 6.3 16.6 nC Turn on Delay Time Rise Time Turn on Delay Time Fall Time VDD=50% Rated VDS ID = 8A RG= 7.5 Ω td(on) tr td(off) tf –– –– –– –– 9.5 42 22 25 30 75 40 45 nsec Diode Forward Voltage (IS= Rated ID, VGS=0 V, TJ=25ºC) VSD –– 1 1.5 V Diode Reverse Recovery Time Reverse Recovery Charge TJ=25ºC IF=10A Di/dt=100A/ µsec trr QRR –– –– 120 0.7 300 3 nsec nC Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0 Volts VDS=25 Volts f=1 MHz Ciss Coss Crss –– –– –– 650 250 44 –– –– –– pF For thermal derating curves and other characteristics please contact SSDI Marketing Department. Available Part Number: SFF130/5 PIN ASSIGNMENT (Standard) Package Drain Source Gate TO-5 Pin 3 Pin 1 Pin 2 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: F00019D DOC |
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