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2SK2371 Fiches technique(PDF) 1 Page - NEC |
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2SK2371 Fiches technique(HTML) 1 Page - NEC |
1 / 8 page MOS FIELD EFFECT TRANSISTORS 2SK2371/2SK2372 DESCRIPTION The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-Resistance 2SK2367: RDS(ON) = 0.25 Ω (VGS = 13 V, ID = 10 A) 2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A) • Low Ciss Ciss = 3600 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (2SK2371/2SK2372) VDSS 450/500 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±25 A Drain Current (pulse)* ID(pulse) ±100 A Total Power Dissipation (TC = 25 °C) PT1 160 W Total Power Dissipation (Ta = 25 °C) PT2 3.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 ~ +150 °C Single Avalanche Current** IAS 25 A Single Avalanche Energy** EAS 446 mJ * PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. © 1995 DATA SHEET Document No. TC-2505 (O.D. No. TC-8064 Date Published January 1995 P Printed in Japan SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Body Diode Source Drain Gate 3 3.2 ± 0.2 4.7 MAX. 1.5 2.8 ± 0.1 0.6 ± 0.1 1.0 ± 0.2 2.2 ± 0.2 5.45 5.45 15.7 MAX. 4 12 1. Gate 2. Drain 3. Source 4. Fin (Drain) MP-88 PACKAGE DIMENSIONS (in millimeters) |
Numéro de pièce similaire - 2SK2371 |
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Description similaire - 2SK2371 |
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