2SK2369 datasheet(1/8 Pages) NEC

No de pièce	2SK2369

Description	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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MOS FIELD EFFECT TRANSISTORS

DESCRIPTION

The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transis-

tor designed for high voltage switching applications.

FEATURES

• Low On-Resistance

2SK2369: RDS(on) = 0.35

Ω (VGS = 10 V, ID = 10 A)

2SK2370: RDS(on) = 0.4

Ω (VGS = 10 V, ID = 10 A)

• Low Ciss

Ciss = 2400 pF TYP.

• High Avalanche Capability Ratings

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage(2SAK2369/2370) VDSS

450/500

V

Gate to Source Voltage

VGSS

±30

V

Drain Current (DC)

ID(DC)

±20

A

Drain Current (pulse)*

ID(pulse)

±80

A

Total Power Dissipation (Tc = 25 ˚C)

PT1

140

W

Total Power Dissipation (TA = 25 ˚C)

PT2

3.0

W

Channel Temperature

Tch

150

˚C

Storage Temperature

Tstg

–55 to +150 ˚C

Single Avalanche Current**

IAS

20

A

Single Avalanche Energy**

EAS

285

mJ

*

PW

≤ 10

µs, Duty Cycle ≤ 1 %

** Starting Tch = 25 ˚C, RG = 25

Ω, VGS = 20 V → 0

2SK2369/2SK2370

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

PACKAGE DIMENSIONS

(in millimeters)

3

φ

4.7 MAX.

1.5

2.8 ± 0.1

0.6 ± 0.1

1.0 ± 0.2

2.2 ± 0.2

5.45

15.7 MAX

4

12

1. Gate

2. Drain

3. Source

4. Fin (Drain)

3.0 ± 0.2

MP-88

Body

Diode

Source

Drain

Gate

Document No. TC-2507

(O. D. No. TC-8066)

Date Published January 1995 P

Printed in Japan

©

1995

DATA SHEET

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