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STP9NM40N Fiches technique(PDF) 5 Page - STMicroelectronics |
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STP9NM40N Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 18 page STD9NM40N, STP9NM40N Electrical characteristics Doc ID 023762 Rev 2 5/18 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 200 V, ID = 5.6 A, RG = 4.7 Ω, VGS = 10 V (see Figure 16) - 7 4.4 25 8.8 - ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) - 5.6 22.4 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 5.6 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5.6 A, di/dt = 100 A/µs VDD = 60 V (see Figure 21) - 187 1.3 14 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 5.6 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 21) - 224 1.5 13 ns µC A |
Numéro de pièce similaire - STP9NM40N |
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Description similaire - STP9NM40N |
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