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STD9NM40N Fiches technique(PDF) 3 Page - STMicroelectronics |
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STD9NM40N Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 18 page STD9NM40N, STP9NM40N Electrical ratings Doc ID 023762 Rev 2 3/18 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 400 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 5.6 A ID Drain current (continuous) at TC = 100 °C 4.3 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 22.4 PTOT Total dissipation at TC = 25 °C 60 W dv/dt (2) 2. ISD ≤ 5.6 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDS= 80% V(BR)DSS Peak diode recovery voltage slope 40 V/ns Tstg Storage temperature - 55 to 150 °C Tj Max. operating junction temperature 150 °C Table 3. Thermal data Symbol Parameter Value Unit DPAK TO-220 Rthj-case Thermal resistance junction-case max 2.08 °C/W Rthj-pcb Thermal resistance junction-pcb max 50 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 2A EAS Single pulse avalanche energy (starting Tj = 25°C, ID = IAR, VDD = 50 V) 140 mJ |
Numéro de pièce similaire - STD9NM40N |
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Description similaire - STD9NM40N |
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