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2SK3363-01 Fiches technique(PDF) 1 Page - Fuji Electric

No de pièce 2SK3363-01
Description  N-CHANNEL SILICON POWER MOS-FET
Download  4 Pages
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Fabricant  FUJI [Fuji Electric]
Site Internet  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

2SK3363-01 Fiches technique(HTML) 1 Page - Fuji Electric

  2SK3363-01 Datasheet HTML 1Page - Fuji Electric 2SK3363-01 Datasheet HTML 2Page - Fuji Electric 2SK3363-01 Datasheet HTML 3Page - Fuji Electric 2SK3363-01 Datasheet HTML 4Page - Fuji Electric  
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1
Item
Symbol
Rating
Unit
Drain-source voltage
VDS
30
Continuous drain current
ID
±50
Pulsed drain current
ID(puls]
±200
Gate-source voltage
VGS
±16
Maximum Avalanche Energy
EAV*1
1735
Max. power dissipation
PD
80
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3363-01
FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=30V
VGS=±16V
ID=50A
VGS=4V
ID=50A
VGS=10V
ID=50A
VDS=25V
VCC=15V ID=100A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
V
µA
mA
nA
m
S
pF
A
V
ns
µC
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
1.56
75.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA
VGS=0V
ID=1mA
VDS=VGS
Tch=25°C
VGS=0V
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
L=100µH Tch=25°C
IF=50A VGS=0V Tch=25°C
IF=50A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
A
A
V
mJ
W
°C
°C
*1 L=0.925mH, Vcc=12V
30
1.0
1.5
2.0
10
500
0.2
1.0
10
100
8.0
10. 5
5.3
6.8
35
70
3900
5850
2000
3000
850
1280
17
30
70
110
250
380
180
270
50
1.0
1.5
65
0.12
-55 to +150
TO-220AB
3. Source


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