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2SK2904-01 Fiches technique(PDF) 1 Page - Fuji Electric

No de pièce 2SK2904-01
Description  N-CHANNEL SILICON POWER MOS-FET
Download  4 Pages
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Fabricant  FUJI [Fuji Electric]
Site Internet  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

2SK2904-01 Fiches technique(HTML) 1 Page - Fuji Electric

  2SK2904-01 Datasheet HTML 1Page - Fuji Electric 2SK2904-01 Datasheet HTML 2Page - Fuji Electric 2SK2904-01 Datasheet HTML 3Page - Fuji Electric 2SK2904-01 Datasheet HTML 4Page - Fuji Electric  
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1
Item
Symbol
Rating
Unit
Drain-source voltage
VDS
60
Continuous drain current
ID
±80
Pulsed drain current
ID(puls]
±320
Gate-source voltage
VGS
±30
Maximum Avalanche Energy
EAV*1
972.3
Max. power dissipation
PD
125
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK2904-01
FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=60V
VGS=±30V
ID=40A
VGS=10V
ID=40A
VDS=25V
VCC=30V ID=80A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
V
µA
mA
nA
m
S
pF
A
V
ns
µC
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
1.0
35.0
°C/W
°C/W
Symbol
BVDSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=1mA
VGS=0V
ID=10mA
VDS=VGS
Tch=25°C
VGS=0V
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
L=100 µH Tch=25°C
IF=50A VGS=0V Tch=25°C
IF=50A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
A
A
V
mJ
W
°C
°C
*1 L=0.203mH, Vcc=24V
60
2.5
3.0
3.5
10
500
0.2
1.0
10
100
9.5
12
20
40
3100
4650
1300
1950
350
530
20
30
85
120
88
130
65
120
80
1.0
1.5
70
0.13
-55 to +150
TO-3P
3. Source


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