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SS2P3 Fiches technique(PDF) 1 Page - Vishay Siliconix

No de pièce SS2P3
Description  High Current Density Surface Mount High Current Density Surface Mount
Download  4 Pages
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Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SS2P3 Fiches technique(HTML) 1 Page - Vishay Siliconix

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SS2P2, SS2P3, SS2P4
www.vishay.com
Vishay General Semiconductor
Revision: 02-Aug-13
1
Document Number: 88910
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
Schottky Barrier Rectifier
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1 per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For
use
in
low
voltage
high
frequency
inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base
P/N-M3
-
halogen-free,
RoHS-compliant,
and
commercial grade
Base
P/NHM3
-
halogen-free,
RoHS-compliant,
and
automotive grade
Terminals:
Matte
tin
plated
leads,
solderable
per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
20 V, 30 V, 40 V
IFSM
50 A
EAS
11.25 mJ
VF
0.50 V
TJ max.
150 °C
Package
DO-220AA (SMP)
Diode variations
Single
DO-220AA (SMP)
eSMP
® Series
Available
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS2P2
SS2P3
SS2P4
UNIT
Device marking code
22
23
24
Maximum repetitive peak reverse voltage
VRRM
20
30
40
V
Maximum average forward rectified current (fig. 1)
IF(AV)
2.0
A
Peak forward surge current 10 ms single
half sine-wave superimposed on rated load
IFSM
50
A
Non-repetitive avalanche energy at IAS = 1.5 A, L = 10 mH, TJ = 25 °C
EAS
11.25
mJ
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C


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