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SS2P3 Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SS2P3 Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 4 page SS2P2, SS2P3, SS2P4 www.vishay.com Vishay General Semiconductor Revision: 02-Aug-13 1 Document Number: 88910 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface Mount Schottky Barrier Rectifier FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1 per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA Case: DO-220AA (SMP) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 20 V, 30 V, 40 V IFSM 50 A EAS 11.25 mJ VF 0.50 V TJ max. 150 °C Package DO-220AA (SMP) Diode variations Single DO-220AA (SMP) eSMP ® Series Available MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS2P2 SS2P3 SS2P4 UNIT Device marking code 22 23 24 Maximum repetitive peak reverse voltage VRRM 20 30 40 V Maximum average forward rectified current (fig. 1) IF(AV) 2.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 50 A Non-repetitive avalanche energy at IAS = 1.5 A, L = 10 mH, TJ = 25 °C EAS 11.25 mJ Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C |
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