Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

IRF9510STRL Fiches technique(PDF) 1 Page - Vishay Siliconix

No de pièce IRF9510STRL
Description  Power MOSFET
Download  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  VISHAY [Vishay Siliconix]
Site Internet  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRF9510STRL Fiches technique(HTML) 1 Page - Vishay Siliconix

  IRF9510STRL Datasheet HTML 1Page - Vishay Siliconix IRF9510STRL Datasheet HTML 2Page - Vishay Siliconix IRF9510STRL Datasheet HTML 3Page - Vishay Siliconix IRF9510STRL Datasheet HTML 4Page - Vishay Siliconix IRF9510STRL Datasheet HTML 5Page - Vishay Siliconix IRF9510STRL Datasheet HTML 6Page - Vishay Siliconix IRF9510STRL Datasheet HTML 7Page - Vishay Siliconix IRF9510STRL Datasheet HTML 8Page - Vishay Siliconix IRF9510STRL Datasheet HTML 9Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 1 / 9 page
background image
Document Number: 91073
www.vishay.com
S11-1050-Rev. C, 30-May-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
IRF9510S, SiHF9510S
Vishay Siliconix
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
•Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
low
on-resistance
and
cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 18 mH, Rg = 25 , IAS = - 4.0 A (see fig. 12).
c. ISD  - 4.0 A, dI/dt  75 A/μs, VDD  VDS, TJ  175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
VDS (V)
- 100
RDS(on) ()VGS = - 10 V
1.2
Qg (Max.) (nC)
8.7
Qgs (nC)
2.2
Qgd (nC)
4.1
Configuration
Single
S
G
D
P-Channel MOSFET
D2PAK (TO-263)
G D
S
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHF9510S-GE3
SiHF9510STRL-GE3a
Lead (Pb)-free
IRF9510SPbF
IRF9510STRLPbFa
SiHF9510S-E3
SiHF9510STL-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
- 100
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at - 10 V
TC = 25 °C
ID
- 4.0
A
TC = 100 °C
- 2.8
Pulsed Drain Currenta
IDM
- 16
Linear Derating Factor
0.29
W/°C
Linear Derating Factor (PCB Mount)e
0.025
Single Pulse Avalanche Energyb
EAS
200
mJ
Avalanche Currenta
IAR
- 4.0
A
Repetiitive Avalanche Energya
EAR
4.3
mJ
Maximum Power Dissipation
TC = 25 °C
PD
43
W
Maximum Power Dissipation (PCB Mount)e
TA = 25 °C
3.7
Peak Diode Recovery dV/dtc
dV/dt
- 5.5
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
* Pb containing terminations are not RoHS compliant, exemptions may apply


Numéro de pièce similaire - IRF9510STRL

FabricantNo de pièceFiches techniqueDescription
logo
Vishay Siliconix
IRF9510STRLPBF VISHAY-IRF9510STRLPBF Datasheet
176Kb / 9P
   Power MOSFET
Rev. C, 30-May-11
IRF9510STRLPBFA VISHAY-IRF9510STRLPBFA Datasheet
201Kb / 9P
   Power MOSFET
01-Jan-2022
More results

Description similaire - IRF9510STRL

FabricantNo de pièceFiches techniqueDescription
logo
ON Semiconductor
NTP35N15G ONSEMI-NTP35N15G Datasheet
161Kb / 7P
   Power MOSFET Power MOSFET
May, 2010 ??Rev. 4
NTMS4937N ONSEMI-NTMS4937N Datasheet
142Kb / 5P
   Power MOSFET Power MOSFET
September, 2009 ??Rev. 0
logo
Fuji Electric
2SK2052-R FUJI-2SK2052-R Datasheet
146Kb / 10P
   Power MOSFET
2SK2100-01MR FUJI-2SK2100-01MR Datasheet
159Kb / 11P
   Power MOSFET
2SK1390-R FUJI-2SK1390-R Datasheet
341Kb / 10P
   Power MOSFET
2SK2849-01L FUJI-2SK2849-01L Datasheet
224Kb / 12P
   Power MOSFET
logo
International Rectifier
IRLIZ44N IRF-IRLIZ44N Datasheet
105Kb / 8P
   Power MOSFET
logo
Fuji Electric
2SK3523-01R FUJI-2SK3523-01R Datasheet
356Kb / 19P
   POWER MOSFET
2SK903 FUJI-2SK903 Datasheet
161Kb / 10P
   POWER MOSFET
logo
Torex Semiconductor
XP135A1145SR TOREX-XP135A1145SR Datasheet
66Kb / 5P
   POWER MOSFET
logo
List of Unclassifed Man...
CMT10N40 ETC1-CMT10N40 Datasheet
158Kb / 5P
   POWER MOSFET
More results


Html Pages

1 2 3 4 5 6 7 8 9


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com