2SK1822-01M datasheet(1/2 Pages) FUJI

No de pièce	2SK1822-01M

Description	N-channel MOS-FET

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Fabricant	FUJI [Fuji Electric]

Site Internet	http://www.fujielectric.co.jp/eng/fdt/scd

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2SK1822-01M

N-channel MOS-FET

FAP-IIIA Series

60V

0,07Ω 20A

35W

> Features

> Outline Drawing

-

High Current

-

Low On-Resistance

-

No Secondary Breakdown

-

Low Driving Power

-

High Forward Transconductance

-

Avalanche Proof

-

Including G-S Zener-Diode

> Applications

-

Motor Control

-

General Purpose Power Amplifier

-

DC-DC Converters

> Maximum Ratings and Characteristics

> Equivalent Circuit

-

Absolute Maximum Ratings (TC=25°C), unless otherwise specified

Item

Symbol

Rating

Unit

Drain-Source-Voltage

V DS

60

V

Continous Drain Current

I D

20

A

Pulsed Drain Current

I D(puls)

80

A

Continous Reverse Drain Current

I DR

20

A

Gate-Source-Voltage

V GS

±20

V

Max. Power Dissipation

P D

35

W

Operating and Storage Temperature Range

T ch

150

°C

T stg

-55 ~ +150

°C

-

Electrical Characteristics (TC=25°C), unless otherwise specified

Item

Symbol

Test conditions

Min.

Typ.

Max.

Unit

Drain-Source Breakdown-Voltage

V (BR)DSS

ID=1mA

VGS=0V

60

V

Gate Threshhold Voltage

V GS(th)

ID=1mA

VDS=VGS

1,0

1,5

2,0

V

Zero Gate Voltage Drain Current

I DSS

VDS=60V

Tch=25°C

500

µA

VGS=0V

Tch=125°C

1,0

mA

Gate Source Leakage Current

I GSS

VGS=±16V

VDS=0V

10

µA

Drain Source On-State Resistance

R DS(on)

ID=10A

VGS=4V

0,09

0,11

Ω

ID=10A

VGS=10V

0,055

0,07

Ω

Forward Transconductance

g fs

ID=10A

VDS=25V

6

12

S

Input Capacitance

C iss

VDS=25V

600

900

pF

Output Capacitance

C oss

VGS=0V

260

390

pF

Reverse Transfer Capacitance

C rss

f=1MHz

150

240

pF

Turn-On-Time ton (ton=td(on)+tr)

t d(on)

VCC=30V

7

11

ns

t r

ID=20A

30

45

ns

Turn-Off-Time toff (ton=td(off)+tf)

t d(off)

VGS=10V

100

150

ns

t f

RGS=25

Ω

70

110

ns

Diode Forward On-Voltage

V SD

IF=2xIDR VGS=0V Tch=25°C

1,45

2,18

V

Reverse Recovery Time

t rr

IF=IDR VGS=0V

90

130

ns

-dIF/dt=100A/µs Tch=25°C

-

Thermal Characteristics

Item

Symbol

Test conditions

Min.

Typ.

Max.

Unit

Thermal Resistance

R th(ch-a)

channel to air

62,5

°C/W

R th(ch-c)

channel to case

3,57

°C/W

FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56

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