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74LVC1G34FW4-7 Fiches technique(PDF) 3 Page - Diodes Incorporated

No de pièce 74LVC1G34FW4-7
Description  SINGLE BUFFER GATE
Download  15 Pages
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Fabricant  DIODES [Diodes Incorporated]
Site Internet  http://www.diodes.com
Logo DIODES - Diodes Incorporated

74LVC1G34FW4-7 Fiches technique(HTML) 3 Page - Diodes Incorporated

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74LVC1G34
Document number: DS36108 Rev. 3 - 2
3 of 15
www.diodes.com
March 2014
© Diodes Incorporated
74LVC1G34
Absolute Maximum Ratings (Notes 6, 7)
Symbol
Parameter
Rating
Unit
ESD HBM
Human Body Model ESD Protection
2
KV
ESD CDM
Charged Device Model ESD Protection
1
KV
ESD MM
Machine Model ESD Protection
200
V
VCC
Supply Voltage Range
-0.5 to 6.5
V
VI
Input Voltage Range
-0.5 to 6.5
V
VO
Voltage Applied to Output in High Impedance or IOFF State
-0.5 to 6.5
V
VO
Voltage Applied to Output in High or Low State.
-0.5 to VCC +0.5
V
IIK
Input Clamp Current VI < 0
-50
mA
IOK
Output Clamp Current
-50
mA
IO
Continuous Output Current
±50
mA
ICC, IGN
Continuous Current Through VCC or GND
±100
mA
TJ
Operating Junction Temperature
-40 to +150
°C
TSTG
Storage Temperature
-65 to +150
°C
Notes:
6. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device
operation should be within recommend values.
7. Forcing the maximum allowed voltage could cause a condition exceeding the maximum current or conversely forcing the maximum current could
cause a condition exceeding the maximum voltage. The ratings of both current and voltage must be maintained within the controlled range..


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