STB34N65M5 datasheet(1/22 Pages) STMICROELECTRONICS

No de pièce	STB34N65M5

Description	N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

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This is information on a product in full production.

October 2013

DocID022853 Rev 3

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STB34N65M5, STI34N65M5,

STP34N65M5, STW34N65M5

N-channel 650 V, 0.09

Ω typ., 28 A MDmesh™ V Power MOSFETs

in D2PAK, I2PAK, TO-220 and TO-247 packages

Datasheet

- production data

Figure 1. Internal schematic diagram

Features

• Worldwide best RDS(on) * area

• Higher VDSS rating and high dv/dt capability

• Excellent switching performance

• 100% avalanche tested

Applications

• Switching applications

Description

These devices are N-channel MDmesh™ V

Power MOSFETs based on an innovative

proprietary vertical process technology, which is

combined with STMicroelectronics’ well-known

PowerMESH™ horizontal layout structure. The

resulting product has extremely low on-

resistance, which is unmatched among silicon-

based Power MOSFETs, making it especially

suitable for applications which require superior

power density and outstanding efficiency.

1

3

2

TAB

1

2

3

TAB

1

2

3

TAB

1

2

3

D2PAK

I2PAK

TO-220

TO-247

Order codes

VDS @ TJmax

RDS(on) max

ID

STB34N65M5

710 V

0.11

Ω

28 A

STI34N65M5

STP34N65M5

STW34N65M5

Table 1. Device summary

Order codes

Marking

Packages

Packaging

STB34N65M5

34N65M5

D2PAK

Tape and reel

STI34N65M5

I2PAK

Tube

STP34N65M5

TO-220

STW34N65M5

TO-247

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