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STB20N65M5 Fiches technique(PDF) 5 Page - STMicroelectronics |
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STB20N65M5 Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 21 page STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5 Electrical characteristics Doc ID 022865 Rev 2 5/21 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(v) tr(v) tf(i) tc(off) Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 12 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19 and Figure 22) - 43 7.5 7.5 11.5 - ns ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current Source-drain current (pulsed) - 18 72 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 18 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 18 A, di/dt = 100 A/µs VDD = 100 V (see Figure 22) - 288 4 27 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 18 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 22) - 342 4.7 28 ns µC A |
Numéro de pièce similaire - STB20N65M5 |
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Description similaire - STB20N65M5 |
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