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BAV102 Fiches technique(PDF) 1 Page - Continental Device India Limited |
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BAV102 Fiches technique(HTML) 1 Page - Continental Device India Limited |
1 / 3 page HIGH SPEED SILICON DIODES BAV100, BAV101 BAV102, BAV103 SOD - 80C Mini MELF (LL- 34 ) Polarity: Cathode is indicated by a white band Hermetically Sealed, Glass Silicon Diodes Intended for Switching and General Purposes in Industrial Equipment e.g. Oscilloscopes, Digital Voltmeters and Video Output Stages in Colour Television ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BAV100 BAV101 BAV102 BAV103 UNIT Continuous Reverse Voltage VR 50 100 150 200 V Repetitive Peak Reverse Voltage VRRM 60 120 200 250 V Average Rectified Forward Current IF (AV) 250 mA Forward Current (DC) IF 250 mA Repetitive Peak Forward Current IFRM 625 mA Non Repetitive Peak Forward Current t=1 s IFSM 1 A t=1 µµs IFSM 5 A Power Dissipation up to Ta=25ºC Ptot 400 mW Storage Temperature Tstg - 65 to +175 ºC Junction Temperature Tj 175 ºC THERMAL RESISTANCE Junction to Ambient in free air Rth (j-a) 0.375 K/mW ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT Forward Voltage VF IF=100mA 1.00 V IF=200mA 1.25 V Reverse Breakdown Voltage *VBR IR=100µA BAV100 60 V BAV101 120 V BAV102 200 V BAV103 250 V Reverse Current IR VR= VR max 100 nA VR= VR max, Tj=150ºC 100 µA Differential Resistance rdiff IF=10mA Ω DYNAMIC CHARACTERISTICS Diode Capacitance Cd VR=0V, f=1MHz 5 pF Reverse Recovery Time trr IF=30mA, to IR=30mA 50 ns RL=100 Ω Measured @ IR=3mA . * @ Zero life time, measured under pulse conditions to avoid excessive dissipation and voltage limited @ 275V Typ 5 Continental Device India Limited Data Sheet Page 1 of 3 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BAV100_103Rev141002E |
Numéro de pièce similaire - BAV102 |
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Description similaire - BAV102 |
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