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BAV102 Fiches technique(PDF) 1 Page - Continental Device India Limited

No de pièce BAV102
Description  HIGH SPEED SILICON DIODES
Download  3 Pages
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Fabricant  CDIL [Continental Device India Limited]
Site Internet  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

BAV102 Fiches technique(HTML) 1 Page - Continental Device India Limited

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HIGH SPEED SILICON DIODES
BAV100, BAV101
BAV102, BAV103
SOD - 80C
Mini MELF (LL- 34 )
Polarity: Cathode is indicated by a white band
Hermetically Sealed, Glass Silicon Diodes
Intended for Switching and General Purposes in Industrial Equipment e.g. Oscilloscopes,
Digital Voltmeters and Video Output Stages in Colour Television
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
BAV100
BAV101
BAV102
BAV103
UNIT
Continuous Reverse Voltage
VR
50
100
150
200
V
Repetitive Peak Reverse Voltage
VRRM
60
120
200
250
V
Average Rectified Forward Current
IF (AV)
250
mA
Forward Current (DC)
IF
250
mA
Repetitive Peak Forward Current
IFRM
625
mA
Non Repetitive Peak Forward Current t=1 s
IFSM
1
A
t=1
µµs
IFSM
5
A
Power Dissipation up to Ta=25ºC
Ptot
400
mW
Storage Temperature
Tstg
- 65 to +175
ºC
Junction Temperature
Tj
175
ºC
THERMAL RESISTANCE
Junction to Ambient in free air
Rth (j-a)
0.375
K/mW
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
MAX
UNIT
Forward Voltage
VF
IF=100mA
1.00
V
IF=200mA
1.25
V
Reverse Breakdown Voltage
*VBR
IR=100µA
BAV100
60
V
BAV101
120
V
BAV102
200
V
BAV103
250
V
Reverse Current
IR
VR= VR max
100
nA
VR= VR max, Tj=150ºC
100
µA
Differential Resistance
rdiff
IF=10mA
DYNAMIC CHARACTERISTICS
Diode Capacitance
Cd
VR=0V, f=1MHz
5
pF
Reverse Recovery Time
trr
IF=30mA, to IR=30mA
50
ns
RL=100 Ω
Measured @ IR=3mA
.
* @ Zero life time, measured under pulse conditions to avoid excessive dissipation and voltage limited @ 275V
Typ 5
Continental Device India Limited
Data Sheet
Page 1 of 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
BAV100_103Rev141002E


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