BCW61D datasheet(2/3 Pages) CDIL

No de pièce	BCW61D

Description	SILICON PLANAR EPITAXIAL TRANSISTORS

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Fabricant	CDIL [Continental Device India Limited]

Site Internet	http://www.cdilsemi.com

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Continental Device India Limited

Data Sheet

Page 2 of 3

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

Collector–emitter voltage (VBE = 0)

–VCES

max.

32 V

Collector–emitter voltage (open base)

–VCE0

max.

32 V

Emitter–base voltage (open collector)

–VEB0

max.

5 V

Collector current (d.c.)

–I C

max.

200 mA

Base current

–lB

max.

50 mA

Total power dissipation up to Tamb = 25 °C

Ptot

max.

250 mW

Storage temperatu re

Tstg

–55 to +150 °C

Junction temperature

Tj

max.

150 ° C

THERMAL RESISTANCE

From junction to ambient

Rth j–a

=

500 K/W

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified

Collector–emitter cut–off current

VEB = 0; –VCE = 32 V

–ICES

<20 nA

VEB = 0; –VCE = 32 V; Tamb = 150 °C

–ICES

<20 mA

Emitter–base cut–off current

IC = 0; –VEB = 4 V

–IEB0

<20 nA

Saturation voltages

–IC = 10 mA; –lB = 0,25 mA

–VCEsat 0,06 to 0,25 V

–VBEsat

0,6 to 0,85 V

–IC = 50mA; –IB = 1,25mA

–VCEsat 0,12 to 0,55 V

–VBEsat

0,68 to 1,05 V

Transition frequency at f = 100 MHz ·

–VCE = 5 V; –IC = 10 mA

fT

typ.

180 MHz

Collector capacitance at f = 1 MHz

–VCB = 10 V; IE: Ie = 0

Cc

typ.

4,5 pF

Emitter capacitance at f = 1 MHz

–VEB = 0,5 V; IC = Ic = 0

Ce

typ.

11 pF

Noise figure at RS = 2 kW

typ.

2 dB

–VCE = 5 V; –IC = 200 mA; B = 200 Hz

F

<

6 dB

BCW61A 61B

61C

61D

D.C. current gain

–VCE = 5 V; –IC = 10 mAhFE

>

20

30

40

100

–VCE = 5 V; –IC = 2 mA

hFE

>

120

180

250

380

<

220

310

460

630

–VCE = 1 V; –IC = 50mA

hFE

>

60

80

100

110

Input impedance

–VCE = 5 V; –IC = 2 mA; f = 1 kHz hie

typ.

2,7

3,6

4,5

7,5 kW

BCW61A BCW61B

BCW61C BCW61D

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