BCW31 datasheet(2/3 Pages) CDIL

No de pièce	BCW31

Description	SILICON PLANAR EPITAXIAL TRANSISTORS

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Fabricant	CDIL [Continental Device India Limited]

Site Internet	http://www.cdilsemi.com

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Continental Device India Limited

Data Sheet

Page 2 of 3

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

Collector–base voltage (open emitter)

VCB0

max.

32 V

Collector–emitter voltage (open base)

IC = 2 mA

VCE0

max.

32 V

Emitter–base voltage (open collector)

VEB0

max.

5 V

Collector current (d.c.)

IC

max.

100 mA

Collector current (peak value)

ICM

max.

200 mA

Total power dissipation up to Tamb = 25 °C

Ptot

max.

250 mW

Storage temperature

Tstg

–55 to +150 °C

Junction temperature

Tj

max.

150 °C

THERMAL RESISTANCE

From junction to ambient*

Rth j–a =

500 K/W

CHARACTERISTICS

Tj = 25 °C unless otherwise specified

Collector cut–off current

IE = 0; VCB = 32 V

ICB0

<

100 nA

IE = 0; VCB = 32 V; Tj = 100 °C

ICB0

<10 mA

Base–emitter voltage

IC = 2 mA; VCE = 5 V

VBE

550 to 700 mV

Saturation voltages

IC = 10 mA; lB = 0,5 mA

typ.

120 mV

VCEsat <

250 mV

VBEsat typ.

750 mV

IC: 50 mA; lB: 2,5 mA

VCEsat typ.

210 mV

VBEsat typ.

850 mV

D.C. current gain

BCW31 BCW32 BCW33

IC = 10 mA, VCE = 5 V

hFE

typ.

90

150

270

IC = 2 mA; VCE = 5 V

hFE

>

110

200

420

<

220

450

800

Collector capacitance at f = 1 MHz

IE = Ie = 0; VCB = 10 V

Cc

typ.

2,5

pF

Transition frequency at f = 35 MHz

IC = 10 mA; VCE = 5 V

fT

typ.

300

MHz

Noise figure at RS = 2 kW

IC = 200mA; VCE = 5 V

f = 1 kHz; B = 200 Hz

F

<

10

dB

BCW31 BCW32

BCW33

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