BCW61B datasheet(1/3 Pages) CDIL

No de pièce	BCW61B

Description	SILICON PLANAR EPITAXIAL TRANSISTORS

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Fabricant	CDIL [Continental Device India Limited]

Site Internet	http://www.cdilsemi.com

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Continental Device India Limited

Data Sheet

Page 1 of 3

SILICON PLANAR EPITAXIAL TRANSISTORS

P–N–P silicon transistors

Marking

BCW61A = BA

BCW61B = BB

BCW61C = BC

BCW61D = BD

ABSOLUTE MAXIMUM RATINGS

Collector–emitter voltage (VBE = 0)

–VCES

max.

32 V

Collector–emitter voltage (open base)

–VCEO

max.

32 V

Collector current (d.c.)

–I C

max.

200 mA

Total power dissipation

Ptot

max.

250 mW

Junction temperature

Tj

max.

150 °C

Transition frequency at f: 100 MHz

–VCE = 5 V; –IC = 10 mA

fT

typ.

180 MHz

Noise figure at f = 1 kHz

–VCE = 5 V; –IC = 200 mA

F

typ.

2 dB

BCW61A BCW61B

BCW61C BCW61D

Pin configuration

1 = BASE

2 = EMITTER

3 = COLLECTOR

PACKAGE OUTLINE DETAILS

ALL DIMENSIONS IN mm

3

2

1

SOT-23 Formed SMD Package

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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